SF38GHA0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 3A DO201AD, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Tape & Box (TB), Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns.