SFAF1008GHC0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 10A ITO220AC, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: ITO-220AC, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 140pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Tube, Qualification: AEC-Q101, Grade: Automotive.