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SFT1440-E

SFT1440-E onsemi

SFT1440-D.PDF Hersteller: onsemi
Description: MOSFET N-CH 600V 1.5A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.1Ohm @ 800mA, 10V
Power Dissipation (Max): 1W (Ta), 20W (Tc)
Supplier Device Package: IPAK/TP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 30 V
auf Bestellung 104482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
720+0.7 EUR
Mindestbestellmenge: 720
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Technische Details SFT1440-E onsemi

Description: MOSFET N-CH 600V 1.5A TP, Packaging: Bag, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 8.1Ohm @ 800mA, 10V, Power Dissipation (Max): 1W (Ta), 20W (Tc), Supplier Device Package: IPAK/TP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 30 V.

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SFT1440-E SFT1440-E Hersteller : ONSEMI ONSMS35675-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - SFT1440-E - SFT1440-E, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 104482 Stücke:
Lieferzeit 14-21 Tag (e)
SFT1440-E SFT1440-E Hersteller : onsemi SFT1440-D.PDF Description: MOSFET N-CH 600V 1.5A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.1Ohm @ 800mA, 10V
Power Dissipation (Max): 1W (Ta), 20W (Tc)
Supplier Device Package: IPAK/TP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 30 V
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