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SFT1458-TL-H

SFT1458-TL-H onsemi


Hersteller: onsemi
Description: MOSFET N-CH 600V 1A DPAK/TP-FA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta), 38W (Tc)
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 20 V
auf Bestellung 145995 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
761+0.65 EUR
Mindestbestellmenge: 761
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Technische Details SFT1458-TL-H onsemi

Description: MOSFET N-CH 600V 1A DPAK/TP-FA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V, Power Dissipation (Max): 1W (Ta), 38W (Tc), Supplier Device Package: DPAK/TP-FA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 20 V.

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SFT1458-TL-H SFT1458-TL-H Hersteller : ONSEMI ONSMS36400-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - SFT1458-TL-H - SFT1458-TL-H, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 150195 Stücke:
Lieferzeit 14-21 Tag (e)
SFT1458-TL-H SFT1458-TL-H Hersteller : onsemi Description: MOSFET N-CH 600V 1A DPAK/TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta), 38W (Tc)
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 20 V
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