SGP10N60RUFDTU
Hersteller: auf Bestellung 6539 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SGP10N60RUFDTU
Description: IGBT 600V 16A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 15ns/36ns, Switching Energy: 141µJ (on), 215µJ (off), Test Condition: 300V, 10A, 20Ohm, 15V, Gate Charge: 30 nC, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 75 W.
Weitere Produktangebote SGP10N60RUFDTU
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SGP10N60RUFDTU | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 16A 75000mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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SGP10N60RUFDTU | Hersteller : onsemi |
Description: IGBT 600V 16A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 15ns/36ns Switching Energy: 141µJ (on), 215µJ (off) Test Condition: 300V, 10A, 20Ohm, 15V Gate Charge: 30 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 75 W |
Produkt ist nicht verfügbar |