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SGP23N60UFDTU

SGP23N60UFDTU ON Semiconductor


sgp23n60ufd-d.pdf Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Tube
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Technische Details SGP23N60UFDTU ON Semiconductor

Description: IGBT 600V 23A 100W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 17ns/60ns, Switching Energy: 115µJ (on), 135µJ (off), Test Condition: 300V, 12A, 23Ohm, 15V, Gate Charge: 49 nC, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 92 A, Power - Max: 100 W.

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SGP23N60UFDTU SGP23N60UFDTU Hersteller : ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFDAEA7C4DA745&compId=SGP23N60UFD.pdf?ci_sign=77df9dfb2a1fa8b493e7711dc0b6925e350700d3 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 12A; 40W; TO220-3
Type of transistor: IGBT
Power dissipation: 40W
Case: TO220-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 12A
Pulsed collector current: 92A
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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SGP23N60UFDTU SGP23N60UFDTU Hersteller : onsemi SGP23N60UFD.pdf Description: IGBT 600V 23A 100W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 17ns/60ns
Switching Energy: 115µJ (on), 135µJ (off)
Test Condition: 300V, 12A, 23Ohm, 15V
Gate Charge: 49 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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SGP23N60UFDTU SGP23N60UFDTU Hersteller : onsemi / Fairchild SGP23N60UFD_D-2319919.pdf IGBT Transistors Dis High Perf IGBT
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SGP23N60UFDTU SGP23N60UFDTU Hersteller : ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFDAEA7C4DA745&compId=SGP23N60UFD.pdf?ci_sign=77df9dfb2a1fa8b493e7711dc0b6925e350700d3 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 12A; 40W; TO220-3
Type of transistor: IGBT
Power dissipation: 40W
Case: TO220-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 12A
Pulsed collector current: 92A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH