SGP23N60UFDTU ON Semiconductor
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details SGP23N60UFDTU ON Semiconductor
Description: IGBT 600V 23A 100W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 17ns/60ns, Switching Energy: 115µJ (on), 135µJ (off), Test Condition: 300V, 12A, 23Ohm, 15V, Gate Charge: 49 nC, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 92 A, Power - Max: 100 W.
Weitere Produktangebote SGP23N60UFDTU
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SGP23N60UFDTU | Hersteller : ONSEMI |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 12A; 40W; TO220-3 Type of transistor: IGBT Power dissipation: 40W Case: TO220-3 Mounting: THT Gate charge: 80nC Kind of package: tube Collector current: 12A Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Pulsed collector current: 92A Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
SGP23N60UFDTU | Hersteller : onsemi |
Description: IGBT 600V 23A 100W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 17ns/60ns Switching Energy: 115µJ (on), 135µJ (off) Test Condition: 300V, 12A, 23Ohm, 15V Gate Charge: 49 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 92 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
|
 |
SGP23N60UFDTU | Hersteller : onsemi / Fairchild |
IGBT Transistors Dis High Perf IGBT |
Produkt ist nicht verfügbar |
|
|
|
SGP23N60UFDTU | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 12A; 40W; TO220-3 Type of transistor: IGBT Power dissipation: 40W Case: TO220-3 Mounting: THT Gate charge: 80nC Kind of package: tube Collector current: 12A Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Pulsed collector current: 92A Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |