Technische Details SGT120R65AL STM
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +6V, -10V, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs(th) (Max) @ Id: 2.6V @ 12mA, Power Dissipation (Max): 192W (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: PowerFlat™ (5x6) HV.
Weitere Produktangebote SGT120R65AL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SGT120R65AL | STMicroelectronics |
 Description: 650 V, 75 MOHM TYP., 15 A, E-MODInput Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +6V, -10V Drive Voltage (Max Rds On, Min Rds On): 6V Vgs(th) (Max) @ Id: 2.6V @ 12mA Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: PowerFlat™ (5x6) HV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SGT120R65AL | STMicroelectronics |
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +6V, -10V Drive Voltage (Max Rds On, Min Rds On): 6V Part Status: Active Supplier Device Package: PowerFlat™ (5x6) HV Vgs(th) (Max) @ Id: 2.6V @ 12mA Power Dissipation (Max): 192W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SGT120R65AL | STMicroelectronics |
GaN FETs 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SGT120R65AL | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 9A Pulsed drain current: 36A Case: PowerFLAT 5x6 Gate-source voltage: -10...7V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 3nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 192W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SGT120R65AL |
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Hersteller: STMicroelectronics
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +6V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 2.6V @ 12mA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerFlat™ (5x6) HV
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +6V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 2.6V @ 12mA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerFlat™ (5x6) HV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SGT120R65AL |
|
Hersteller: STMicroelectronics
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD
Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +6V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: PowerFlat™ (5x6) HV
Vgs(th) (Max) @ Id: 2.6V @ 12mA
Power Dissipation (Max): 192W (Tc)
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD
Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +6V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: PowerFlat™ (5x6) HV
Vgs(th) (Max) @ Id: 2.6V @ 12mA
Power Dissipation (Max): 192W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SGT120R65AL |
|
Hersteller: STMicroelectronics
GaN FETs 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor
GaN FETs 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SGT120R65AL |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 9A
Pulsed drain current: 36A
Case: PowerFLAT 5x6
Gate-source voltage: -10...7V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 192W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 9A
Pulsed drain current: 36A
Case: PowerFLAT 5x6
Gate-source voltage: -10...7V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 192W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH