SGT120R65AL STMicroelectronics
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Technische Details SGT120R65AL STMicroelectronics
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 12mA, Supplier Device Package: PowerFlat™ (5x6) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +6V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V.
Weitere Produktangebote SGT120R65AL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SGT120R65AL | Hersteller : STMicroelectronics |
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| SGT120R65AL | Hersteller : STMicroelectronics |
Trans MOSFET N-CH GaN 650V 15A 8-Pin Power Flat EP T/R |
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| SGT120R65AL | Hersteller : STMicroelectronics |
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SGT120R65AL | Hersteller : STMicroelectronics |
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 12mA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
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SGT120R65AL | Hersteller : STMicroelectronics |
Description: 650 V, 75 MOHM TYP., 15 A, E-MOD Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 5A, 6V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 12mA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
Produkt ist nicht verfügbar |
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SGT120R65AL | Hersteller : STMicroelectronics |
GaN FETs 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor |
Produkt ist nicht verfügbar |