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SGW15N120FKSA1

SGW15N120FKSA1 Infineon Technologies


sgp_w15n120_rev2_5.pdf Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 30A 198000mW 3-Pin(3+Tab) TO-247 Tube
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Technische Details SGW15N120FKSA1 Infineon Technologies

Description: IGBT 1200V 30A 198W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A, Supplier Device Package: PG-TO247-3-1, IGBT Type: NPT, Td (on/off) @ 25°C: 18ns/580ns, Switching Energy: 1.9mJ, Test Condition: 800V, 15A, 33Ohm, 15V, Gate Charge: 130 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 52 A, Power - Max: 198 W.

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SGW15N120FKSA1 SGW15N120FKSA1 Hersteller : Infineon Technologies SG(P,W)15N120.pdf Description: IGBT 1200V 30A 198W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/580ns
Switching Energy: 1.9mJ
Test Condition: 800V, 15A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 198 W
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SGW15N120FKSA1 Hersteller : Infineon Technologies SG(P,W)15N120.pdf IGBT Transistors IGBT PRODUCTS
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