SGW5N60RUFDTM

SGW5N60RUFDTM Fairchild Semiconductor


FAIRS17358-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 5A
Supplier Device Package: D2PAK (TO-263)
Td (on/off) @ 25°C: 13ns/34ns
Switching Energy: 88µJ (on), 107µJ (off)
Test Condition: 300V, 5A, 40Ohm, 15V
Gate Charge: 16 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 60 W
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Technische Details SGW5N60RUFDTM Fairchild Semiconductor

Description: N-CHANNEL IGBT, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 5A, Supplier Device Package: D2PAK (TO-263), Td (on/off) @ 25°C: 13ns/34ns, Switching Energy: 88µJ (on), 107µJ (off), Test Condition: 300V, 5A, 40Ohm, 15V, Gate Charge: 16 nC, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 15 A, Power - Max: 60 W.