SH68N65DM6AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
auf Bestellung 249 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 42.43 EUR |
| 10+ | 32.33 EUR |
| 100+ | 26.61 EUR |
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Technische Details SH68N65DM6AG STMicroelectronics
Description: MOSFET 2N-CH 650V 64A 9ACEPACK, Packaging: Tape & Reel (TR), Package / Case: 9-PowerSMD, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 379W (Tc), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V, Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V, Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V, Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: 9-ACEPACK SMIT, Part Status: Active.
Weitere Produktangebote SH68N65DM6AG nach Preis ab 33.58 EUR bis 44.11 EUR
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SH68N65DM6AG | Hersteller : STMicroelectronics |
Description: MOSFET 2N-CH 650V 64A 9ACEPACK Packaging: Cut Tape (CT) Package / Case: 9-PowerSMD Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 379W (Tc) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: 9-ACEPACK SMIT Part Status: Active |
auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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| SH68N65DM6AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 64A Automotive AEC-Q101 9-Pin SMIT T/R |
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SH68N65DM6AG | Hersteller : STMicroelectronics |
Description: MOSFET 2N-CH 650V 64A 9ACEPACK Packaging: Tape & Reel (TR) Package / Case: 9-PowerSMD Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 379W (Tc) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: 9-ACEPACK SMIT Part Status: Active |
Produkt ist nicht verfügbar |