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SH68N65DM6AG STMicroelectronics


sh68n65dm6ag.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 650V 64A 9ACEPACK
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 379W (Tc)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V
Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: 9-ACEPACK SMIT
Part Status: Active
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
200+18.87 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SH68N65DM6AG STMicroelectronics

Description: MOSFET 2N-CH 650V 64A 9ACEPACK, Packaging: Tape & Reel (TR), Package / Case: 9-PowerSMD, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 379W (Tc), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V, Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V, Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V, Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: 9-ACEPACK SMIT, Part Status: Active.

Weitere Produktangebote SH68N65DM6AG nach Preis ab 22.18 EUR bis 36.74 EUR

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SH68N65DM6AG SH68N65DM6AG STMicroelectronics sh68n65dm6ag.pdf Description: MOSFET 2N-CH 650V 64A 9ACEPACK
Packaging: Cut Tape (CT)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 379W (Tc)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V
Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: 9-ACEPACK SMIT
Part Status: Active
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.84 EUR
10+24.18 EUR
100+23.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SH68N65DM6AG SH68N65DM6AG STMicroelectronics sh68n65dm6ag.pdf MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
auf Bestellung 178 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.74 EUR
10+26.24 EUR
100+22.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SH68N65DM6AG sh68n65dm6ag.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 650V 64A 9ACEPACK
Packaging: Cut Tape (CT)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 379W (Tc)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V
Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: 9-ACEPACK SMIT
Part Status: Active
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+33.84 EUR
10+24.18 EUR
100+23.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SH68N65DM6AG sh68n65dm6ag.pdf
Hersteller: STMicroelectronics
MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
auf Bestellung 178 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+36.74 EUR
10+26.24 EUR
100+22.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH