SH8J65TB1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2P-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SH8J65TB1 Rohm Semiconductor
Description: ROHM - SH8J65TB1 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 7 A, 7 A, 0.0215 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 7A, Dauer-Drainstrom Id, p-Kanal: 7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 7A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0215ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: TUK SGACK902S Keystone Coupler, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0215ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: Boric acid (14-Jun-2023).
Weitere Produktangebote SH8J65TB1 nach Preis ab 0.99 EUR bis 4.32 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SH8J65TB1 | Hersteller : Rohm Semiconductor | Trans MOSFET P-CH Si 30V 7A 8-Pin SOP T/R |
auf Bestellung 884 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8J65TB1 | Hersteller : Rohm Semiconductor | Trans MOSFET P-CH Si 30V 7A 8-Pin SOP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8J65TB1 | Hersteller : Rohm Semiconductor | Trans MOSFET P-CH Si 30V 7A 8-Pin SOP T/R |
auf Bestellung 2460 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8J65TB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 7A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
auf Bestellung 3351 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8J65TB1 | Hersteller : ROHM Semiconductor | MOSFET Pch+Pch -30V -7A MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 126-140 Tag (e) |
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SH8J65TB1 | Hersteller : ROHM |
Description: ROHM - SH8J65TB1 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 7 A, 7 A, 0.0215 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0215ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler Drain-Source-Durchgangswiderstand, n-Kanal: 0.0215ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 2396 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8J65TB1 | Hersteller : ROHM |
Description: ROHM - SH8J65TB1 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 7 A, 7 A, 0.0215 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 7A Dauer-Drainstrom Id, p-Kanal: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0215ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler Drain-Source-Durchgangswiderstand, n-Kanal: 0.0215ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 2396 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8J65TB1 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SH8J65TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40.8mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SH8J65TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40.8mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |