SH8JE5TB1 ROHM Semiconductor
Hersteller: ROHM SemiconductorMOSFETs SH8JE5 is a low on-resistance MOSFET ideal for switching applications.
auf Bestellung 2565 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.73 EUR |
| 10+ | 3.31 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.74 EUR |
| 2500+ | 1.66 EUR |
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Technische Details SH8JE5TB1 ROHM Semiconductor
Description: -100V 4.5A, DUAL PCH+PCH, SOP8,, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V, Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.
Weitere Produktangebote SH8JE5TB1 nach Preis ab 1.84 EUR bis 4.08 EUR
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| SH8JE5TB1 | Hersteller : Rohm Semiconductor |
Description: -100V 4.5A, DUAL PCH+PCH, SOP8, Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| SH8JE5TB1 | Hersteller : Rohm Semiconductor |
Description: -100V 4.5A, DUAL PCH+PCH, SOP8, Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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