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SH8K26GZ0TB

SH8K26GZ0TB Rohm Semiconductor

sh8k26gz0tb-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 1651 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.8 EUR
100+0.56 EUR
500+0.46 EUR
1000+0.43 EUR
Mindestbestellmenge: 19
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Technische Details SH8K26GZ0TB Rohm Semiconductor

Description: MOSFET 2N-CH 40V 6A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V, Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.

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auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.08 EUR
10+0.98 EUR
100+0.66 EUR
500+0.53 EUR
1000+0.51 EUR
2500+0.48 EUR
5000+0.46 EUR
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SH8K26GZ0TB Hersteller : ROHM SEMICONDUCTOR sh8k26gz0tb-e.pdf SH8K26GZ0TB Multi channel transistors
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SH8K26GZ0TB SH8K26GZ0TB Hersteller : Rohm Semiconductor sh8k26gz0tb-e.pdf Description: MOSFET 2N-CH 40V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH