SH8K26GZ0TB Rohm Semiconductor
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 196+ | 0.75 EUR |
| 250+ | 0.69 EUR |
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Technische Details SH8K26GZ0TB Rohm Semiconductor
Description: MOSFET 2N-CH 40V 6A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V, Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.
Weitere Produktangebote SH8K26GZ0TB nach Preis ab 0.43 EUR bis 1.78 EUR
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SH8K26GZ0TB | Hersteller : Rohm Semiconductor |
 Description: MOSFET 2N-CH 40V 6A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
auf Bestellung 1651 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8K26GZ0TB | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 40V 6A 8-Pin SOP T/R |
auf Bestellung 807 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8K26GZ0TB | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 40V 6A 8-Pin SOP T/R |
auf Bestellung 363 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8K26GZ0TB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 6A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
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SH8K26GZ0TB | Hersteller : ROHM Semiconductor |
MOSFETs 4V Drive Nch+Nch MOSFET |
Produkt ist nicht verfügbar |