SH8K26GZ0TB1 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 177+ | 0.99 EUR |
| 250+ | 0.93 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SH8K26GZ0TB1 Rohm Semiconductor
Description: ROHM - SH8K26GZ0TB1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 6 A, 6 A, 0.038 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 6A, Dauer-Drainstrom Id, p-Kanal: 6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 40V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 6A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.038ohm, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote SH8K26GZ0TB1 nach Preis ab 0.8 EUR bis 3.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SH8K26GZ0TB1 | Rohm Semiconductor |
 Trans MOSFET N-CH 40V 6A 8-Pin SOP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8K26GZ0TB1 | Rohm Semiconductor |
Description: 40V NCH+NCH POWER MOSFET : MIDDL Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8K26GZ0TB1 | Rohm Semiconductor |
Description: 40V NCH+NCH POWER MOSFET : MIDDL Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 4986 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8K26GZ0TB1 | ROHM |
Description: ROHM - SH8K26GZ0TB1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 6 A, 6 A, 0.038 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.038ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8K26GZ0TB1 | ROHM |
Description: ROHM - SH8K26GZ0TB1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 6 A, 6 A, 0.038 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 6A Dauer-Drainstrom Id, p-Kanal: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.038ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8K26GZ0TB1 | ROHM Semiconductor |
MOSFETs 40V Nch+Nch Power MOSFET |
auf Bestellung 3499 Stücke: Lieferzeit 10-14 Tag (e) |
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| SH8K26GZ0TB1 |
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Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 40V 6A 8-Pin SOP T/R
Trans MOSFET N-CH 40V 6A 8-Pin SOP T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 177+ | 0.99 EUR |
| 250+ | 0.93 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.83 EUR |
| 2500+ | 0.8 EUR |
| SH8K26GZ0TB1 |
|
Hersteller: Rohm Semiconductor
Description: 40V NCH+NCH POWER MOSFET : MIDDL
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: 40V NCH+NCH POWER MOSFET : MIDDL
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.18 EUR |
| SH8K26GZ0TB1 |
|
Hersteller: Rohm Semiconductor
Description: 40V NCH+NCH POWER MOSFET : MIDDL
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: 40V NCH+NCH POWER MOSFET : MIDDL
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.76 EUR |
| 10+ | 2.48 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.26 EUR |
| SH8K26GZ0TB1 |
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Hersteller: ROHM
Description: ROHM - SH8K26GZ0TB1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 6 A, 6 A, 0.038 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 6A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.038ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
Description: ROHM - SH8K26GZ0TB1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 6 A, 6 A, 0.038 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 6A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.038ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 87+ | 2.9 EUR |
| 126+ | 1.84 EUR |
| 174+ | 1.24 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.89 EUR |
| SH8K26GZ0TB1 |
|
Hersteller: ROHM
Description: ROHM - SH8K26GZ0TB1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 6 A, 6 A, 0.038 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
Dauer-Drainstrom Id, p-Kanal: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 6A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.038ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
Description: ROHM - SH8K26GZ0TB1 - Dual-MOSFET, n-Kanal, 40 V, 40 V, 6 A, 6 A, 0.038 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
Dauer-Drainstrom Id, p-Kanal: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 40V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 6A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.038ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.9 EUR |
| 126+ | 1.84 EUR |
| 174+ | 1.24 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.89 EUR |
| SH8K26GZ0TB1 |
|
Hersteller: ROHM Semiconductor
MOSFETs 40V Nch+Nch Power MOSFET
MOSFETs 40V Nch+Nch Power MOSFET
auf Bestellung 3499 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.61 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.08 EUR |
| 2500+ | 1 EUR |