SH8K41GZETB Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2N-CH 80V 3.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.67 EUR |
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Technische Details SH8K41GZETB Rohm Semiconductor
Description: MOSFET 2N-CH 80V 3.4A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Not For New Designs.
Weitere Produktangebote SH8K41GZETB nach Preis ab 0.62 EUR bis 1.58 EUR
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MOSFET 4V Drive Nch+Nch MOSFET |
auf Bestellung 26640 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8K41GZETB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 80V 3.4A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8K41GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.4A; Idm: 13.6A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.4A Pulsed drain current: 13.6A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 160mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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SH8K41GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.4A; Idm: 13.6A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.4A Pulsed drain current: 13.6A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 160mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |