SH8KA2GZETB Rohm Semiconductor
auf Bestellung 1944 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 170+ | 0.91 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.73 EUR |
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Technische Details SH8KA2GZETB Rohm Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 8A; Idm: 16A; 2.8W; SOP8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 8A, Pulsed drain current: 16A, Power dissipation: 2.8W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 43mΩ, Mounting: SMD, Gate charge: 8nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SH8KA2GZETB nach Preis ab 0.89 EUR bis 2.31 EUR
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SH8KA2GZETB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8KA2GZETB | Hersteller : ROHM Semiconductor |
 MOSFET 30V Nch+Nch Si MOSFET |
auf Bestellung 2485 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8KA2GZETB | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 8A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Power - Max: 2.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
auf Bestellung 2907 Stücke: Lieferzeit 10-14 Tag (e) |
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SH8KA2GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8A; Idm: 16A; 2.8W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 16A Power dissipation: 2.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
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SH8KA2GZETB | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8A; Idm: 16A; 2.8W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 16A Power dissipation: 2.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |