Technische Details SH8M41GZETB Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, FET Feature: Logic Level Gate, 4V Drive, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Not For New Designs.
Weitere Produktangebote SH8M41GZETB nach Preis ab 1.05 EUR bis 3.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SH8M41GZETB | Rohm Semiconductor |
 Trans MOSFET N/P-CH Si 80V 3.4A/2.6A 8-Pin SOP T/R |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
SH8M41GZETB | Rohm Semiconductor |
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
auf Bestellung 2477 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SH8M41GZETB |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N/P-CH Si 80V 3.4A/2.6A 8-Pin SOP T/R
Trans MOSFET N/P-CH Si 80V 3.4A/2.6A 8-Pin SOP T/R
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 132+ | 1.49 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.05 EUR |
| SH8M41GZETB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
auf Bestellung 2477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.92 EUR |
| 10+ | 2.5 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.23 EUR |