SH8M41TB1 ROHM SEMICONDUCTOR
Hersteller: ROHM SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2245 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 94+ | 0.76 EUR |
| 106+ | 0.67 EUR |
| 117+ | 0.61 EUR |
| 123+ | 0.58 EUR |
| 500+ | 0.56 EUR |
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Produktbewertung abgeben
Technische Details SH8M41TB1 ROHM SEMICONDUCTOR
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Not For New Designs.
Weitere Produktangebote SH8M41TB1 nach Preis ab 0.56 EUR bis 3.77 EUR
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SH8M41TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 80/-80V Drain current: 3.4/-2.6A Pulsed drain current: 10.4...13.6A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 160/310mΩ Mounting: SMD Gate charge: 6.6/8.2nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2245 Stücke: Lieferzeit 14-21 Tag (e) |
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SH8M41TB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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SH8M41TB1 | Hersteller : Rohm Semiconductor |
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
auf Bestellung 6177 Stücke: Lieferzeit 21-28 Tag (e) |
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SH8M41TB1 | Hersteller : ROHM Semiconductor |
MOSFET Nch+Pch 80V/-80V 3.4A/-2.6A; MOSFET |
auf Bestellung 19291 Stücke: Lieferzeit 14-28 Tag (e) |
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