SH8MA4TB1 Rohm Semiconductor
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.86 EUR |
5000+ | 0.81 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SH8MA4TB1 Rohm Semiconductor
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/-8.5A; Idm: 18A; 3W, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Drain-source voltage: 30/-30V, Drain current: 9/-8.5A, Pulsed drain current: 18A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 32.5/41.3mΩ, Mounting: SMD, Gate charge: 15.5/19.6nC, Kind of package: reel; tape, Kind of channel: enhanced.
Weitere Produktangebote SH8MA4TB1 nach Preis ab 0.75 EUR bis 2.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SH8MA4TB1 | Hersteller : ROHM Semiconductor | MOSFET SH8MA4TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching. |
auf Bestellung 4534 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
SH8MA4TB1 | Hersteller : Rohm Semiconductor | Description: SH8MA4TB1 IS LOW ON-RESISTANCE A |
auf Bestellung 8960 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
SH8MA4TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/-8.5A; Idm: 18A; 3W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 9/-8.5A Pulsed drain current: 18A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 32.5/41.3mΩ Mounting: SMD Gate charge: 15.5/19.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||||||
SH8MA4TB1 | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/-8.5A; Idm: 18A; 3W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 9/-8.5A Pulsed drain current: 18A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 32.5/41.3mΩ Mounting: SMD Gate charge: 15.5/19.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |