SI01P10-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)
Description: MOSFET P-CH 100V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
Power Dissipation (Max): 770mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 40 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.17 EUR |
| 15000+ | 0.16 EUR |
| 21000+ | 0.15 EUR |
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Technische Details SI01P10-TP MCC (Micro Commercial Components)
Description: MOSFET P-CH 100V 1A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tj), Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V, Power Dissipation (Max): 770mW, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 40 V.
Weitere Produktangebote SI01P10-TP nach Preis ab 0.23 EUR bis 0.86 EUR
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SI01P10-TP | Hersteller : MCC (Micro Commercial Components) |
Description: MOSFET P-CH 100V 1A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V Power Dissipation (Max): 770mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 388 pF @ 40 V |
auf Bestellung 44658 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI01P10-TP | Hersteller : NXP/Nexperia/We-En |
P-канальний ПТ, Udss, В = 100, Id = 1 А, Ciss, пФ @ Uds, В = 388 @ 40, Qg, нКл = 3,2, Rds = 0,8 Ом, Ugs(th) = 3 В, Р, Вт = 0,77, Тексп, °C = -55...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: SOT-23-3 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 9 Stücke: |