SI1011X-T1-GE3 Vishay / Siliconix

Description: MOSFET P-CH 12V SC89-3, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), Rds On (Max) @ Id, Vgs: 640mOhm @ 400mA, 4.5V, Power Dissipation (Max): 190mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: SC-89-3, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 62 pF @ 6 V.