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Technische Details SI1011X-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CH 12V SC89-3, Input Capacitance (Ciss) (Max) @ Vds: 62 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±5V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: SC-89-3, Vgs(th) (Max) @ Id: 800mV @ 250µA, Power Dissipation (Max): 190mW (Ta), Rds On (Max) @ Id, Vgs: 640mOhm @ 400mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-89, SOT-490, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1011X-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SI1011X-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 12V SC89-3Input Capacitance (Ciss) (Max) @ Vds: 62 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±5V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 800mV @ 250µA Power Dissipation (Max): 190mW (Ta) Rds On (Max) @ Id, Vgs: 640mOhm @ 400mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SI1011X-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 12V SC89-3 Input Capacitance (Ciss) (Max) @ Vds: 62 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±5V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 800mV @ 250µA Power Dissipation (Max): 190mW (Ta) Rds On (Max) @ Id, Vgs: 640mOhm @ 400mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI1011X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 62 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 190mW (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 12V SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 62 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 190mW (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI1011X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 62 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 190mW (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 12V SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 62 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 190mW (Ta)
Rds On (Max) @ Id, Vgs: 640mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH