SI1012X-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 20V 500MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.26 EUR |
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Technische Details SI1012X-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 20V 500MA SC89-3, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V, Power Dissipation (Max): 250mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SC-89-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V.
Weitere Produktangebote SI1012X-T1-GE3 nach Preis ab 0.23 EUR bis 1.14 EUR
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SI1012X-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 20V 0.6A 175mW 700mohm @ 4.5V |
auf Bestellung 1597 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1012X-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 500MA SC89-3 Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SC-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V |
auf Bestellung 6469 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1012X-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1012X-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 0.5A 3-Pin SC-89 T/R |
Produkt ist nicht verfügbar |
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| SI1012X-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.35A; 0.08W; SC89,SOT563; ESD Mounting: SMD Case: SC89; SOT563 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.35A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 80mW Polarisation: unipolar Version: ESD Gate charge: 0.75nC Kind of channel: enhancement Gate-source voltage: ±6V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI1012X-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.35A; 0.08W; SC89,SOT563; ESD Mounting: SMD Case: SC89; SOT563 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.35A On-state resistance: 0.7Ω Type of transistor: N-MOSFET Power dissipation: 80mW Polarisation: unipolar Version: ESD Gate charge: 0.75nC Kind of channel: enhancement Gate-source voltage: ±6V |
Produkt ist nicht verfügbar |