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SI1013R-T1-GE3

SI1013R-T1-GE3 Vishay Siliconix

si1013rx.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.22 EUR
30000+0.21 EUR
75000+0.20 EUR
Mindestbestellmenge: 3000
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Technische Details SI1013R-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 350MA SC75A, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: SC-75A, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V.

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SI1013R-T1-GE3 SI1013R-T1-GE3 Hersteller : Vishay Semiconductors si1013rx.pdf MOSFETs 20V 350mA 175mW 1.2 ohms @ 4.5V
auf Bestellung 44440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.89 EUR
10+0.61 EUR
100+0.49 EUR
9000+0.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SI1013R-T1-GE3 SI1013R-T1-GE3 Hersteller : Vishay Siliconix si1013rx.pdf Description: MOSFET P-CH 20V 350MA SC75A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 79680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
25+0.72 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.32 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
SI1013R-T1-GE3 Hersteller : VISHAY si1013rx.pdf SI1013R-T1-GE3 SMD P channel transistors
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