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Technische Details SI1013R-T1-GE3 Vishay
Description: MOSFET P-CH 20V 350MA SC75A, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±6V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SC-75A, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1013R-T1-GE3 nach Preis ab 0.24 EUR bis 1.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI1013R-T1-GE3 | Vishay |
Trans MOSFET P-CH 20V 0.35A 3-Pin SC-75A T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1013R-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 350MA SC75AGate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±6V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SC-75A Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
auf Bestellung 75000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1013R-T1-GE3 | Vishay |
Trans MOSFET P-CH 20V 0.35A 3-Pin SC-75A T/R |
auf Bestellung 2157 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1013R-T1-GE3 | Vishay |
Trans MOSFET P-CH 20V 0.35A 3-Pin SC-75A T/R |
auf Bestellung 2157 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1013R-T1-GE3 | Vishay Semiconductors |
MOSFETs 20V 350mA 175mW 1.2 ohms @ 4.5V |
auf Bestellung 44440 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1013R-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 350MA SC75APackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SC-75A Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V |
auf Bestellung 79680 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI1013R-T1-GE3 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 20V 0.35A 3-Pin SC-75A T/R
Trans MOSFET P-CH 20V 0.35A 3-Pin SC-75A T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.3 EUR |
| SI1013R-T1-GE3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC75A
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-75A
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 350MA SC75A
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-75A
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.3 EUR |
| 9000+ | 0.29 EUR |
| 15000+ | 0.26 EUR |
| 30000+ | 0.25 EUR |
| 75000+ | 0.24 EUR |
| SI1013R-T1-GE3 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 20V 0.35A 3-Pin SC-75A T/R
Trans MOSFET P-CH 20V 0.35A 3-Pin SC-75A T/R
auf Bestellung 2157 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 252+ | 0.7 EUR |
| 338+ | 0.51 EUR |
| 461+ | 0.37 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.31 EUR |
| SI1013R-T1-GE3 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 20V 0.35A 3-Pin SC-75A T/R
Trans MOSFET P-CH 20V 0.35A 3-Pin SC-75A T/R
auf Bestellung 2157 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 214+ | 0.82 EUR |
| 249+ | 0.68 EUR |
| 252+ | 0.65 EUR |
| 338+ | 0.46 EUR |
| 461+ | 0.33 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.26 EUR |
| SI1013R-T1-GE3 |
![]() |
Hersteller: Vishay Semiconductors
MOSFETs 20V 350mA 175mW 1.2 ohms @ 4.5V
MOSFETs 20V 350mA 175mW 1.2 ohms @ 4.5V
auf Bestellung 44440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.06 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.58 EUR |
| 9000+ | 0.3 EUR |
| SI1013R-T1-GE3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC75A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Description: MOSFET P-CH 20V 350MA SC75A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 79680 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.4 EUR |
| 25+ | 0.86 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |




