SI1023CX-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V SC89-6
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI1023CX-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 20V SC89-6, Part Status: Active, Supplier Device Package: SC-89 (SOT-563F), Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V, Drain to Source Voltage (Vdss): 20V, Power - Max: 220mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1023CX-T1-GE3 nach Preis ab 0.18 EUR bis 0.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI1023CX-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V SC89-6 Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SC-89 (SOT-563F) Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Drain to Source Voltage (Vdss): 20V Power - Max: 220mW Technology: MOSFET (Metal Oxide) |
auf Bestellung 59655 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SI1023CX-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 8V Vgs SC89-6 |
auf Bestellung 94053 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI1023CX-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V SC89-6
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
Description: MOSFET 2P-CH 20V SC89-6
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
auf Bestellung 59655 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 30+ | 0.6 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.23 EUR |
| SI1023CX-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 8V Vgs SC89-6
MOSFETs -20V Vds 8V Vgs SC89-6
auf Bestellung 94053 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.2 EUR |
| 6000+ | 0.18 EUR |