SI1023X-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.37A SC89
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Technische Details SI1023X-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.37A SC89, Supplier Device Package: SC-89 (SOT-563F), Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 370mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 250mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1023X-T1-GE3 nach Preis ab 0.21 EUR bis 1.16 EUR
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SI1023X-T1-GE3 | Vishay Semiconductors |
MOSFETs Dual P-Ch MOSFET 20V 1.2 ohms @ 4.5V |
auf Bestellung 7189 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1023X-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 0.37A SC89 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 370mA Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SC-89 (SOT-563F) |
auf Bestellung 4780 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI1023X-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs Dual P-Ch MOSFET 20V 1.2 ohms @ 4.5V
MOSFETs Dual P-Ch MOSFET 20V 1.2 ohms @ 4.5V
auf Bestellung 7189 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.82 EUR |
| 10+ | 0.52 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.23 EUR |
| 9000+ | 0.21 EUR |
| SI1023X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.37A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 370mA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89 (SOT-563F)
Description: MOSFET 2P-CH 20V 0.37A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 370mA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 4780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.16 EUR |
| 25+ | 0.71 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |