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SI1025X-T1-GE3 Vishay Siliconix


si1025x.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 0.19A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.28 EUR
6000+0.26 EUR
9000+0.25 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details SI1025X-T1-GE3 Vishay Siliconix

Description: MOSFET 2P-CH 60V 0.19A SC89, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 190mA, Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V, Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SC-89 (SOT-563F).

Weitere Produktangebote SI1025X-T1-GE3 nach Preis ab 0.26 EUR bis 1.28 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
SI1025X-T1-GE3 SI1025X-T1-GE3 Vishay Semiconductors si1025x.pdf MOSFETs -60V Vds 20V Vgs SC89-6
auf Bestellung 37299 Stücke:
Lieferzeit 10-14 Tag (e)
3+0.95 EUR
10+0.68 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.3 EUR
3000+0.27 EUR
6000+0.26 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI1025X-T1-GE3 SI1025X-T1-GE3 Vishay Siliconix si1025x.pdf Description: MOSFET 2P-CH 60V 0.19A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 16543 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
23+0.8 EUR
100+0.49 EUR
500+0.39 EUR
1000+0.34 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI1025X-T1-GE3 Vishay Siliconix si1025x.pdf 2P-канальний ПТ, Udss, В = 60, Id = 190 мА, Ciss, пФ @ Uds, В = 23 @ 25, Qg, нКл = 1,7 @ 15, Rds = 4 Ом, Ugs(th) = 3 В, Р, Вт = 0,25, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-666 Очікується: 20 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 300 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
SI1025X-T1-GE3 si1025x.pdf
Hersteller: Vishay Semiconductors
MOSFETs -60V Vds 20V Vgs SC89-6
auf Bestellung 37299 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+0.95 EUR
10+0.68 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.3 EUR
3000+0.27 EUR
6000+0.26 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI1025X-T1-GE3 si1025x.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 0.19A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 16543 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
14+1.28 EUR
23+0.8 EUR
100+0.49 EUR
500+0.39 EUR
1000+0.34 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI1025X-T1-GE3 si1025x.pdf
Hersteller: Vishay Siliconix
2P-канальний ПТ, Udss, В = 60, Id = 190 мА, Ciss, пФ @ Uds, В = 23 @ 25, Qg, нКл = 1,7 @ 15, Rds = 4 Ом, Ugs(th) = 3 В, Р, Вт = 0,25, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-666 Очікується: 20 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 300 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH