SI1025X-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 0.19A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.28 EUR |
| 6000+ | 0.26 EUR |
| 9000+ | 0.25 EUR |
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Technische Details SI1025X-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 60V 0.19A SC89, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 190mA, Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V, Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SC-89 (SOT-563F).
Weitere Produktangebote SI1025X-T1-GE3 nach Preis ab 0.26 EUR bis 1.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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SI1025X-T1-GE3 | Vishay Semiconductors |
MOSFETs -60V Vds 20V Vgs SC89-6 |
auf Bestellung 37299 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1025X-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 60V 0.19A SC89Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 190mA Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-89 (SOT-563F) |
auf Bestellung 16543 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI1025X-T1-GE3 | Vishay Siliconix |
2P-канальний ПТ, Udss, В = 60, Id = 190 мА, Ciss, пФ @ Uds, В = 23 @ 25, Qg, нКл = 1,7 @ 15, Rds = 4 Ом, Ugs(th) = 3 В, Р, Вт = 0,25, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-666 Очікується: 20 Од. вим: штAnzahl je Verpackung: 3000 Stücke |
verfügbar 300 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| SI1025X-T1-GE3 |
![]() |
Hersteller: Vishay Semiconductors
MOSFETs -60V Vds 20V Vgs SC89-6
MOSFETs -60V Vds 20V Vgs SC89-6
auf Bestellung 37299 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.95 EUR |
| 10+ | 0.68 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.27 EUR |
| 6000+ | 0.26 EUR |
| SI1025X-T1-GE3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 0.19A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Description: MOSFET 2P-CH 60V 0.19A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 16543 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 23+ | 0.8 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.34 EUR |
| SI1025X-T1-GE3 |
![]() |
Hersteller: Vishay Siliconix
2P-канальний ПТ, Udss, В = 60, Id = 190 мА, Ciss, пФ @ Uds, В = 23 @ 25, Qg, нКл = 1,7 @ 15, Rds = 4 Ом, Ugs(th) = 3 В, Р, Вт = 0,25, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-666 Очікується: 20 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
2P-канальний ПТ, Udss, В = 60, Id = 190 мА, Ciss, пФ @ Uds, В = 23 @ 25, Qg, нКл = 1,7 @ 15, Rds = 4 Ом, Ugs(th) = 3 В, Р, Вт = 0,25, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-666 Очікується: 20 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 300 Stücke:


