SI1026X-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.305A SC89
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.22 EUR |
| 9000+ | 0.21 EUR |
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Technische Details SI1026X-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.305A SC89, Supplier Device Package: SC-89 (SOT-563F), Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 305mA, Drain to Source Voltage (Vdss): 60V, Power - Max: 250mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1026X-T1-GE3 nach Preis ab 0.23 EUR bis 1.18 EUR
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SI1026X-T1-GE3 | Vishay Semiconductors |
MOSFETs 60V Vds 20V Vgs SC89-6 |
auf Bestellung 28534 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1026X-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.305A SC89 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-89 (SOT-563F) |
auf Bestellung 291944 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI1026X-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 60V Vds 20V Vgs SC89-6
MOSFETs 60V Vds 20V Vgs SC89-6
auf Bestellung 28534 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.03 EUR |
| 10+ | 0.7 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.24 EUR |
| 6000+ | 0.23 EUR |
| SI1026X-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.305A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Description: MOSFET 2N-CH 60V 0.305A SC89
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 291944 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.18 EUR |
| 25+ | 0.73 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |