auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI1026X-T1-GE3 Vishay
Description: MOSFET 2N-CH 60V 0.305A SC89, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 305mA, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SC-89 (SOT-563F).
Weitere Produktangebote SI1026X-T1-GE3 nach Preis ab 0.21 EUR bis 1.18 EUR
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SI1026X-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1026X-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.305A SC89 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-89 (SOT-563F) |
auf Bestellung 291000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1026X-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 60V Vds 20V Vgs SC89-6 |
auf Bestellung 29034 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1026X-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.305A SC89 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-89 (SOT-563F) |
auf Bestellung 292129 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1026X-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1026X-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R |
Produkt ist nicht verfügbar |
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SI1026X-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.305A 6-Pin SC-89 T/R |
Produkt ist nicht verfügbar |
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| SI1026X-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.22A; 0.13W; SC89,SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Power dissipation: 0.13W Case: SC89; SOT563 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI1026X-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.22A; 0.13W; SC89,SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Power dissipation: 0.13W Case: SC89; SOT563 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |