SI1029X-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 0.305A SC89
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V, 1700nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 23pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
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Technische Details SI1029X-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 60V 0.305A SC89, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Supplier Device Package: SC-89 (SOT-563F), Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V, 1700nC @ 4.5V, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 23pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA, Drain to Source Voltage (Vdss): 60V, Power - Max: 250mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount.
Weitere Produktangebote SI1029X-T1-GE3 nach Preis ab 0.24 EUR bis 1.18 EUR
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SI1029X-T1-GE3 | Vishay Semiconductors |
MOSFETs 60V Vds 20V Vgs SC89-6 N&P PAIR |
auf Bestellung 52806 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1029X-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 60V 0.305A SC89 Supplier Device Package: SC-89 (SOT-563F) Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V, 1700nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 23pF @ 25V Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA Drain to Source Voltage (Vdss): 60V Power - Max: 250mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 5975 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI1029X-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 60V Vds 20V Vgs SC89-6 N&P PAIR
MOSFETs 60V Vds 20V Vgs SC89-6 N&P PAIR
auf Bestellung 52806 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.72 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.24 EUR |
| SI1029X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 0.305A SC89
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V, 1700nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 23pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 60V 0.305A SC89
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V, 1700nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 23pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 5975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.18 EUR |
| 25+ | 0.73 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |