SI1050X-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
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Technische Details SI1050X-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SC89-6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta), Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V, Power Dissipation (Max): 236mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SC-89 (SOT-563F), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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SI1050X-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 8V 1.34A SC89-6 Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V Drain to Source Voltage (Vdss): 8 V Vgs (Max): ±5V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: SC-89 (SOT-563F) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 236mW (Ta) Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI1050X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 8V 1.34A SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH