SI1058X-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Technische Details SI1058X-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 20V SC89-6, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SC-89 (SOT-563F), Vgs(th) (Max) @ Id: 1.55V @ 250µA, Power Dissipation (Max): 236mW (Ta), Rds On (Max) @ Id, Vgs: 91mOhm @ 1.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).