SI1077X-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.5 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
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Technische Details SI1077X-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V SC89-6, Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: SC-89 (SOT-563F), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 330mW (Ta), Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.75A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1077X-T1-GE3 nach Preis ab 0.25 EUR bis 0.79 EUR
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SI1077X-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 20V SC89-6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.75A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 4.5V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89 (SOT-563F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 10 V |
auf Bestellung 4304 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI1077X-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.75A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 4.5V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 10 V
Description: MOSFET P-CH 20V SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.75A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 1.8A, 4.5V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 10 V
auf Bestellung 4304 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |