Si1078X-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.02A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 1A, 10V
Power Dissipation (Max): 240mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
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Technische Details Si1078X-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 1.02A SOT563F, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc), Rds On (Max) @ Id, Vgs: 142mOhm @ 1A, 10V, Power Dissipation (Max): 240mW (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V.
Weitere Produktangebote Si1078X-T1-GE3 nach Preis ab 0.14 EUR bis 0.63 EUR
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Si1078X-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 1.02A SOT563F Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc) Rds On (Max) @ Id, Vgs: 142mOhm @ 1A, 10V Power Dissipation (Max): 240mW (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V |
auf Bestellung 4792 Stücke: Lieferzeit 10-14 Tag (e) |
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Si1078X-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 12V Vgs SC89-6 |
auf Bestellung 12174 Stücke: Lieferzeit 10-14 Tag (e) |
|
| Si1078X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.02A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 1A, 10V
Power Dissipation (Max): 240mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
Description: MOSFET N-CH 30V 1.02A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc)
Rds On (Max) @ Id, Vgs: 142mOhm @ 1A, 10V
Power Dissipation (Max): 240mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
auf Bestellung 4792 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 39+ | 0.45 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.17 EUR |
| Si1078X-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 12V Vgs SC89-6
MOSFETs 30V Vds 12V Vgs SC89-6
auf Bestellung 12174 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 0.63 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.14 EUR |