SI1302DL-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.23 EUR |
| 15000+ | 0.21 EUR |
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Technische Details SI1302DL-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V, Power Dissipation (Max): 280mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SC-70-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V.
Weitere Produktangebote SI1302DL-T1-GE3 nach Preis ab 0.19 EUR bis 0.77 EUR
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SI1302DL-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W Polarisation: unipolar Case: SC70; SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 1.4nC Power dissipation: 0.18W Drain current: 0.48A On-state resistance: 0.48Ω Pulsed drain current: 1.5A Gate-source voltage: ±20V Drain-source voltage: 30V Kind of package: reel; tape |
auf Bestellung 2969 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1302DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 600MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V |
auf Bestellung 29771 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1302DL-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs SC70-3 |
auf Bestellung 6282 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI1302DL-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W
Polarisation: unipolar
Case: SC70; SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 1.4nC
Power dissipation: 0.18W
Drain current: 0.48A
On-state resistance: 0.48Ω
Pulsed drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W
Polarisation: unipolar
Case: SC70; SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 1.4nC
Power dissipation: 0.18W
Drain current: 0.48A
On-state resistance: 0.48Ω
Pulsed drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of package: reel; tape
auf Bestellung 2969 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 152+ | 0.47 EUR |
| 167+ | 0.43 EUR |
| 253+ | 0.28 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.19 EUR |
| SI1302DL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
auf Bestellung 29771 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.26 EUR |
| SI1302DL-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs SC70-3
MOSFETs 30V Vds 20V Vgs SC70-3
auf Bestellung 6282 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.77 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.28 EUR |
| 3000+ | 0.2 EUR |
| 6000+ | 0.19 EUR |