SI1308EDL-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.4A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.26 EUR |
| 9000+ | 0.23 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI1308EDL-T1-GE3 Vishay Siliconix
Description: VISHAY - SI1308EDL-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 1.4 A, 0.132 ohm, SOT-323, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 1.4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 600mV, euEccn: NLR, Verlustleistung: 500mW, Bauform - Transistor: SOT-323, Anzahl der Pins: 3Pin(s), Produktpalette: E, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.132ohm, SVHC: No SVHC (04-Feb-2026).
Weitere Produktangebote SI1308EDL-T1-GE3 nach Preis ab 0.32 EUR bis 1.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SI1308EDL-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 1.4A SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V Power Dissipation (Max): 400mW (Ta), 500mW (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V |
auf Bestellung 14516 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1308EDL-T1-GE3 | VISHAY |
Description: VISHAY - SI1308EDL-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 1.4 A, 0.132 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 1.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.132ohm SVHC: No SVHC (04-Feb-2026) |
auf Bestellung 60913 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1308EDL-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; ESD Mounting: SMD Pulsed drain current: 6A Power dissipation: 0.3W Gate charge: 4.1nC Polarisation: unipolar Version: ESD Drain current: 1.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SC70; SOT323 On-state resistance: 132mΩ |
auf Bestellung 5890 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI1308EDL-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.4A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
Description: MOSFET N-CH 30V 1.4A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
auf Bestellung 14516 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.13 EUR |
| 30+ | 0.7 EUR |
| 50+ | 0.51 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |
| SI1308EDL-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI1308EDL-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 1.4 A, 0.132 ohm, SOT-323, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 1.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 600mV
euEccn: NLR
Verlustleistung: 500mW
Bauform - Transistor: SOT-323
Anzahl der Pins: 3Pin(s)
Produktpalette: E
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.132ohm
SVHC: No SVHC (04-Feb-2026)
Description: VISHAY - SI1308EDL-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 1.4 A, 0.132 ohm, SOT-323, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 1.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 600mV
euEccn: NLR
Verlustleistung: 500mW
Bauform - Transistor: SOT-323
Anzahl der Pins: 3Pin(s)
Produktpalette: E
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.132ohm
SVHC: No SVHC (04-Feb-2026)
auf Bestellung 60913 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 181+ | 1.38 EUR |
| 293+ | 0.8 EUR |
| 459+ | 0.46 EUR |
| 610+ | 0.36 EUR |
| 1500+ | 0.32 EUR |
| SI1308EDL-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; ESD
Mounting: SMD
Pulsed drain current: 6A
Power dissipation: 0.3W
Gate charge: 4.1nC
Polarisation: unipolar
Version: ESD
Drain current: 1.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SC70; SOT323
On-state resistance: 132mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; ESD
Mounting: SMD
Pulsed drain current: 6A
Power dissipation: 0.3W
Gate charge: 4.1nC
Polarisation: unipolar
Version: ESD
Drain current: 1.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SC70; SOT323
On-state resistance: 132mΩ
auf Bestellung 5890 Stücke:
Lieferzeit 14-21 Tag (e)