SI1330EDL-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 240MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI1330EDL-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240mA (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V, Power Dissipation (Max): 280mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SC-70-3, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V.
Weitere Produktangebote SI1330EDL-T1-E3 nach Preis ab 0.25 EUR bis 1.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI1330EDL-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 60V Vds 20V Vgs SC70-3 |
auf Bestellung 6245 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SI1330EDL-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 240MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V |
auf Bestellung 25734 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SI1330EDL-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.24A 3-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
SI1330EDL-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; 0.18W; SC70; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Power dissipation: 0.18W Case: SC70 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.4nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
SI1330EDL-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; 0.18W; SC70; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Power dissipation: 0.18W Case: SC70 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.4nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |