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SI1403BDL-T1-GE3

SI1403BDL-T1-GE3 Vishay Siliconix


si1403bdl.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.30 EUR
6000+0.28 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI1403BDL-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 1.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 625mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V.

Weitere Produktangebote SI1403BDL-T1-GE3 nach Preis ab 0.27 EUR bis 1.27 EUR

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Preis
SI1403BDL-T1-GE3 SI1403BDL-T1-GE3 Hersteller : Vishay Semiconductors si1403bdl.pdf MOSFETs -20V Vds 12V Vgs SC-70
auf Bestellung 2585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.97 EUR
10+0.75 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.35 EUR
3000+0.28 EUR
9000+0.27 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SI1403BDL-T1-GE3 SI1403BDL-T1-GE3 Hersteller : Vishay Siliconix si1403bdl.pdf Description: MOSFET P-CH 20V 1.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 11480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
SI1403BDL-T1-GE3 SI1403BDL-T1-GE3 Hersteller : Vishay si1403bdl.pdf Trans MOSFET P-CH 20V 1.4A 6-Pin SC-70 T/R
Produkt ist nicht verfügbar
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SI1403BDL-T1-GE3 SI1403BDL-T1-GE3 Hersteller : VISHAY si1403bdl.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A
Mounting: SMD
Case: SC70; SOT323
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 265mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.625W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -5A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI1403BDL-T1-GE3 SI1403BDL-T1-GE3 Hersteller : VISHAY si1403bdl.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A
Mounting: SMD
Case: SC70; SOT323
Drain-source voltage: -20V
Drain current: -1.5A
On-state resistance: 265mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.625W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -5A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH