SI1404BDH-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.9A/2.37A SC70
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.32W (Ta), 2.28W (Tc)
Rds On (Max) @ Id, Vgs: 238mOhm @ 1.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
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Technische Details SI1404BDH-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 1.9A/2.37A SC70, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 1.32W (Ta), 2.28W (Tc), Rds On (Max) @ Id, Vgs: 238mOhm @ 1.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.37A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V.