SI1416EDH-T1-BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.9A/3.9A SC70-6
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V
Produktrezensionen
Produktbewertung abgeben
Technische Details SI1416EDH-T1-BE3 Vishay Siliconix
Description: VISHAY - SI1416EDH-T1-BE3 - MOSFET, N-CH, 30V, 3.9A, SC-70, tariffCode: 85364190, Transistormontage: Surface Mount, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 3.9A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 1.4V, Verlustleistung: 2.8W, SVHC: No SVHC (07-Nov-2024), Bauform - Transistor: SC-70, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: N Channel, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.047ohm, directShipCharge: 25.
Weitere Produktangebote SI1416EDH-T1-BE3 nach Preis ab 0.21 EUR bis 1.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI1416EDH-T1-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 3.9A/3.9A SC70-6 Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 3.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Part Status: Active Supplier Device Package: SC-70-6 |
auf Bestellung 4482 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SI1416EDH-T1-BE3 | Vishay / Siliconix |
MOSFETs SOT363 N-CH 30V 3.9A |
auf Bestellung 35233 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SI1416EDH-T1-BE3 | VISHAY |
Description: VISHAY - SI1416EDH-T1-BE3 - MOSFET, N-CH, 30V, 3.9A, SC-70 tariffCode: 85364190 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.4V Verlustleistung: 2.8W SVHC: No SVHC (07-Nov-2024) Bauform - Transistor: SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: N Channel Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.047ohm directShipCharge: 25 |
auf Bestellung 2641 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI1416EDH-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.9A/3.9A SC70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Part Status: Active
Supplier Device Package: SC-70-6
Description: MOSFET N-CH 30V 3.9A/3.9A SC70-6
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Part Status: Active
Supplier Device Package: SC-70-6
auf Bestellung 4482 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.9 EUR |
| 29+ | 0.73 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.3 EUR |
| SI1416EDH-T1-BE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs SOT363 N-CH 30V 3.9A
MOSFETs SOT363 N-CH 30V 3.9A
auf Bestellung 35233 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.13 EUR |
| 10+ | 0.7 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.23 EUR |
| 6000+ | 0.21 EUR |
| SI1416EDH-T1-BE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI1416EDH-T1-BE3 - MOSFET, N-CH, 30V, 3.9A, SC-70
tariffCode: 85364190
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.4V
Verlustleistung: 2.8W
SVHC: No SVHC (07-Nov-2024)
Bauform - Transistor: SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.047ohm
directShipCharge: 25
Description: VISHAY - SI1416EDH-T1-BE3 - MOSFET, N-CH, 30V, 3.9A, SC-70
tariffCode: 85364190
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.4V
Verlustleistung: 2.8W
SVHC: No SVHC (07-Nov-2024)
Bauform - Transistor: SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.047ohm
directShipCharge: 25
auf Bestellung 2641 Stücke:
Lieferzeit 14-21 Tag (e)