auf Bestellung 101991 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.60 EUR |
| 10+ | 0.41 EUR |
| 100+ | 0.26 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.16 EUR |
| 9000+ | 0.15 EUR |
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Technische Details SI1427EDH-T1-BE3 Vishay / Siliconix
Description: MOSFET P-CH 20V 2A/2A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 2A (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V, Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-70-6, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V.
Weitere Produktangebote SI1427EDH-T1-BE3 nach Preis ab 0.24 EUR bis 0.92 EUR
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SI1427EDH-T1-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 20V 2A/2A SC70-6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 2A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V |
auf Bestellung 2769 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1427EDH-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 2A/2A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 2A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V |
Produkt ist nicht verfügbar |