SI1442DH-T1-BE3 Vishay Siliconix

Description: MOSFET N-CH 12V 4A SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Part Status: Active, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.56W (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).