auf Bestellung 12728 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.7 EUR |
| 10+ | 0.5 EUR |
| 100+ | 0.22 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
| 24000+ | 0.13 EUR |
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Technische Details SI1442DH-T1-BE3 Vishay / Siliconix
Description: MOSFET N-CH 12V 4A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V.
Weitere Produktangebote SI1442DH-T1-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI1442DH-T1-BE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 12V 4A 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
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SI1442DH-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 12V 4A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V |
Produkt ist nicht verfügbar |
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SI1442DH-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 12V 4A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V |
Produkt ist nicht verfügbar |