SI1442DH-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
| 9000+ | 0.2 EUR |
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Technische Details SI1442DH-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V, Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V.
Weitere Produktangebote SI1442DH-T1-GE3 nach Preis ab 0.2 EUR bis 1.04 EUR
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SI1442DH-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 12V Vds 8V Vgs SC70-6 |
auf Bestellung 239294 Stücke: Lieferzeit 14-28 Tag (e) |
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SI1442DH-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 12V 4A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V |
auf Bestellung 17922 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1442DH-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI1442DH-T1-GE3 - Leistungs-MOSFET, n-Kanal, 12 V, 4 A, 0.017 ohm, SOT-363, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 400mV euEccn: NLR Verlustleistung: 2.8W Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: Trench productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.017ohm |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1442DH-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI1442DH-T1-GE3 - Leistungs-MOSFET, n-Kanal, 12 V, 4 A, 0.017 ohm, SOT-363, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 400mV euEccn: NLR Verlustleistung: 2.8W Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: Trench productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.017ohm |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1442DH-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 12V 4A 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
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SI1442DH-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 12V 4A 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
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SI1442DH-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 12V 4A 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
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| SI1442DH-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W Mounting: SMD Case: SC70-6; SOT363 Pulsed drain current: 20A Power dissipation: 2.8W Gate charge: 33nC Polarisation: unipolar Technology: TrenchFET® Drain current: 4A Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 30mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI1442DH-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W Mounting: SMD Case: SC70-6; SOT363 Pulsed drain current: 20A Power dissipation: 2.8W Gate charge: 33nC Polarisation: unipolar Technology: TrenchFET® Drain current: 4A Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 30mΩ |
Produkt ist nicht verfügbar |