SI1442DH-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 50+ | 0.35 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
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Technische Details SI1442DH-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1442DH-T1-GE3 nach Preis ab 0.14 EUR bis 0.88 EUR
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SI1442DH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W Polarisation: unipolar Case: SC70-6; SOT363 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: TrenchFET® Gate charge: 33nC On-state resistance: 30mΩ Power dissipation: 2.8W Drain current: 4A Gate-source voltage: ±8V Drain-source voltage: 12V Pulsed drain current: 20A Kind of package: reel; tape |
auf Bestellung 2170 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1442DH-T1-GE3 | Vishay Semiconductors |
MOSFETs 12V Vds 8V Vgs SC70-6 |
auf Bestellung 141967 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI1442DH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W
Polarisation: unipolar
Case: SC70-6; SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: TrenchFET®
Gate charge: 33nC
On-state resistance: 30mΩ
Power dissipation: 2.8W
Drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 12V
Pulsed drain current: 20A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W
Polarisation: unipolar
Case: SC70-6; SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: TrenchFET®
Gate charge: 33nC
On-state resistance: 30mΩ
Power dissipation: 2.8W
Drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 12V
Pulsed drain current: 20A
Kind of package: reel; tape
auf Bestellung 2170 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 241+ | 0.3 EUR |
| 271+ | 0.26 EUR |
| 371+ | 0.19 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| SI1442DH-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 12V Vds 8V Vgs SC70-6
MOSFETs 12V Vds 8V Vgs SC70-6
auf Bestellung 141967 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.2 EUR |
| 6000+ | 0.18 EUR |