Produktrezensionen
Produktbewertung abgeben
Technische Details SI1471DH-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CH 30V 2.7A SC70-6, Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc).
Weitere Produktangebote SI1471DH-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
SI1471DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 2.7A SC70-6Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI1471DH-T1-GE3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC70-6
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Description: MOSFET P-CH 30V 2.7A SC70-6
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



