SI1480BDH-T1-GE3 Vishay / Siliconix
Hersteller: Vishay / Siliconix
MOSFETs N-Channel 80 V (D-S) MOSFET PowerPAK SO-8, 1.8 mohm a. 10V 1.7 mohm a. 7.5V
| Anzahl | Preis |
|---|---|
| 3+ | 1.01 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.23 EUR |
| 6000+ | 0.21 EUR |
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Technische Details SI1480BDH-T1-GE3 Vishay / Siliconix
Description: N-CHNNEL 100-V (D-S) MOSFET SC70, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc), Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V, Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V.
Weitere Produktangebote SI1480BDH-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI1480BDH-T1-GE3 | Vishay Siliconix |
Description: N-CHNNEL 100-V (D-S) MOSFET SC70 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc) Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SI1480BDH-T1-GE3 | Vishay Siliconix |
Description: N-CHNNEL 100-V (D-S) MOSFET SC70 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc) Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI1480BDH-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.38A; 2.6W; SC70-6,SOT363 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.38A Power dissipation: 2.6W Case: SC70-6; SOT363 On-state resistance: 212mΩ Mounting: SMD Gate charge: 3.9nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI1480BDH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHNNEL 100-V (D-S) MOSFET SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc)
Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V
Description: N-CHNNEL 100-V (D-S) MOSFET SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc)
Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI1480BDH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHNNEL 100-V (D-S) MOSFET SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc)
Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V
Description: N-CHNNEL 100-V (D-S) MOSFET SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc)
Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI1480BDH-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.38A; 2.6W; SC70-6,SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.38A
Power dissipation: 2.6W
Case: SC70-6; SOT363
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 3.9nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.38A; 2.6W; SC70-6,SOT363
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.38A
Power dissipation: 2.6W
Case: SC70-6; SOT363
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 3.9nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH