SI1480BDH-T1-GE3 Vishay / Siliconix
Hersteller: Vishay / SiliconixMOSFETs N-Channel 80 V (D-S) MOSFET PowerPAK SO-8, 1.8 mohm a. 10V 1.7 mohm a. 7.5V
auf Bestellung 2910 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.84 EUR |
| 10+ | 0.58 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
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Technische Details SI1480BDH-T1-GE3 Vishay / Siliconix
Description: N-CHNNEL 100-V (D-S) MOSFET SC70, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc), Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V, Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V.
Weitere Produktangebote SI1480BDH-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI1480BDH-T1-GE3 | Hersteller : Vishay |
N-Channel 100 V (D-S) MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1480BDH-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHNNEL 100-V (D-S) MOSFET SC70 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc) Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V |
Produkt ist nicht verfügbar |
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SI1480BDH-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHNNEL 100-V (D-S) MOSFET SC70 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc) Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V |
Produkt ist nicht verfügbar |