auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.22 EUR |
| 6000+ | 0.20 EUR |
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Technische Details SI1480DH-T1-BE3 Vishay
Description: MOSFET N-CH 100V 2.1A/2.6A SC70, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 2.6A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.9A, 10V, Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SC-70-6, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V.
Weitere Produktangebote SI1480DH-T1-BE3 nach Preis ab 0.27 EUR bis 0.70 EUR
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SI1480DH-T1-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 100V 2.1A/2.6A SC70Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 2.6A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.9A, 10V Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-6 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V |
auf Bestellung 2957 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1480DH-T1-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs SOT363 100V 2.6A N-CH MOSFET |
auf Bestellung 80736 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1480DH-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 2.1A/2.6A SC70 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 2.6A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.9A, 10V Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-6 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 50 V |
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