auf Bestellung 58547 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.20 EUR |
| 9000+ | 0.17 EUR |
| 24000+ | 0.16 EUR |
Produktrezensionen
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Technische Details SI1539CDL-T1-BE3 Vishay / Siliconix
Description: VISHAY - SI1539CDL-T1-BE3 - MOSFET, N & P-CH, 30V, 0.7A, SOT-363, tariffCode: 85412100, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 700mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 700mA, Drain-Source-Durchgangswiderstand, p-Kanal: 0.323ohm, Verlustleistung, p-Kanal: 340mW, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.323ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: N and P Channel, Verlustleistung, n-Kanal: 340mW, Betriebstemperatur, max.: 150°C, directShipCharge: 25, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote SI1539CDL-T1-BE3 nach Preis ab 0.22 EUR bis 0.90 EUR
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SI1539CDL-T1-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N/P-CH 30V 0.7A SC70-6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta), 340mW (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-6 |
auf Bestellung 2291 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1539CDL-T1-BE3 | Hersteller : VISHAY |
Description: VISHAY - SI1539CDL-T1-BE3 - MOSFET, N & P-CH, 30V, 0.7A, SOT-363 tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 700mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 700mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.323ohm Verlustleistung, p-Kanal: 340mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.323ohm productTraceability: Yes-Date/Lot Code Kanaltyp: N and P Channel Verlustleistung, n-Kanal: 340mW Betriebstemperatur, max.: 150°C directShipCharge: 25 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 2845 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1539CDL-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 0.7A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta), 340mW (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-6 |
Produkt ist nicht verfügbar |