SI1902CDL-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.1A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.2 EUR |
| 15000+ | 0.19 EUR |
| 21000+ | 0.18 EUR |
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Technische Details SI1902CDL-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.1A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 420mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.1A, Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V, Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6.
Weitere Produktangebote SI1902CDL-T1-GE3 nach Preis ab 0.17 EUR bis 1 EUR
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SI1902CDL-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70-6,SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.27W Case: SC70-6; SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.235Ω Drain current: 0.9A Gate charge: 2nC Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement |
auf Bestellung 340 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1902CDL-T1-GE3 | Vishay Semiconductors |
MOSFETs 20V Vds 12V Vgs SC70-6 |
auf Bestellung 30340 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1902CDL-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 1.1A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 420mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.1A Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 |
auf Bestellung 21508 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI1902CDL-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70-6,SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SC70-6; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.235Ω
Drain current: 0.9A
Gate charge: 2nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70-6,SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SC70-6; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.235Ω
Drain current: 0.9A
Gate charge: 2nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 207+ | 0.35 EUR |
| 232+ | 0.31 EUR |
| 338+ | 0.21 EUR |
| SI1902CDL-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 20V Vds 12V Vgs SC70-6
MOSFETs 20V Vds 12V Vgs SC70-6
auf Bestellung 30340 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 0.68 EUR |
| 10+ | 0.41 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.25 EUR |
| 3000+ | 0.19 EUR |
| 6000+ | 0.17 EUR |
| SI1902CDL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.1A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Description: MOSFET 2N-CH 20V 1.1A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 21508 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 29+ | 0.62 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |