Produktrezensionen
Produktbewertung abgeben
Technische Details SI1902DL-T1-GE3 Vishay
Description: MOSFET 2N-CH 20V 0.66A SC70-6, Part Status: Active, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 660mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 270mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1902DL-T1-GE3 nach Preis ab 0.3 EUR bis 1.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI1902DL-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 20V 0.66A SC70-6Part Status: Active Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 660mA Drain to Source Voltage (Vdss): 20V Power - Max: 270mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SI1902DL-T1-GE3 | Vishay |
Trans MOSFET N-CH Si 20V 0.66A 6-Pin SC-70 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
SI1902DL-T1-GE3 | Vishay Semiconductors |
MOSFETs 20V .66A .27W |
auf Bestellung 76473 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SI1902DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.66A SC70-6 Part Status: Active Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 660mA Drain to Source Voltage (Vdss): 20V Power - Max: 270mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V |
auf Bestellung 13403 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| SI1902DL-T1-GE3 |
|
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI1902DL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.37 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.32 EUR |
| SI1902DL-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH Si 20V 0.66A 6-Pin SC-70 T/R
Trans MOSFET N-CH Si 20V 0.66A 6-Pin SC-70 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.42 EUR |
| SI1902DL-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 20V .66A .27W
MOSFETs 20V .66A .27W
auf Bestellung 76473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.4 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |
| 6000+ | 0.3 EUR |
| SI1902DL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 660mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 660mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
auf Bestellung 13403 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.55 EUR |
| 22+ | 0.96 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| SI1902DL-T1-GE3 |
|
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)