SI1902DL-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.27 EUR |
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Technische Details SI1902DL-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 270mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 660mA, Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active.
Weitere Produktangebote SI1902DL-T1-GE3 nach Preis ab 0.25 EUR bis 1.3 EUR
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SI1902DL-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 20V .66A .27W |
auf Bestellung 76673 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1902DL-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.66A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
auf Bestellung 13403 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1902DL-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 0.66A; Idm: 1A Case: SC70-6; SOT363 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Gate charge: 0.8nC On-state resistance: 0.63Ω Power dissipation: 0.27W Drain current: 0.66A Pulsed drain current: 1A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI1902DL-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 0.66A; Idm: 1A Case: SC70-6; SOT363 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Gate charge: 0.8nC On-state resistance: 0.63Ω Power dissipation: 0.27W Drain current: 0.66A Pulsed drain current: 1A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |