auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI1926DL-T1-GE3 Vishay
Description: MOSFET 2N-CH 60V 0.37A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 510mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 370mA, Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SC-70-6.
Weitere Produktangebote SI1926DL-T1-GE3 nach Preis ab 0.14 EUR bis 0.81 EUR
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SI1926DL-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 0.37A 6-Pin SC-70 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1926DL-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.37A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 510mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 370mA Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1926DL-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.37A 6-Pin SC-70 T/R |
auf Bestellung 1121 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1926DL-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.37A 6-Pin SC-70 T/R |
auf Bestellung 1121 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1926DL-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 60V Vds 20V Vgs SC70-6 |
auf Bestellung 30218 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1926DL-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.37A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 510mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 370mA Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-6 |
auf Bestellung 4830 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI1926DL-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 370mA; Idm: 0.65A Drain-source voltage: 60V Drain current: 0.37A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 510mW Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 0.65A Mounting: SMD Case: SC70-6; SOT363 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI1926DL-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 370mA; Idm: 0.65A Drain-source voltage: 60V Drain current: 0.37A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 510mW Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 0.65A Mounting: SMD Case: SC70-6; SOT363 |
Produkt ist nicht verfügbar |