SI1926DL-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
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Technische Details SI1926DL-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 510mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 370mA, Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SC-70-6.
Weitere Produktangebote SI1926DL-T1-GE3 nach Preis ab 0.27 EUR bis 1.25 EUR
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SI1926DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.37A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 510mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 370mA Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-6 |
auf Bestellung 4830 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1926DL-T1-GE3 | Vishay Semiconductors |
MOSFETs 60V Vds 20V Vgs SC70-6 |
auf Bestellung 26156 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI1926DL-T1-GE3 |
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auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI1926DL-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Description: MOSFET 2N-CH 60V 0.37A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 370mA
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 4830 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.96 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| SI1926DL-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 60V Vds 20V Vgs SC70-6
MOSFETs 60V Vds 20V Vgs SC70-6
auf Bestellung 26156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.25 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.29 EUR |
| 6000+ | 0.27 EUR |
| SI1926DL-T1-GE3 |
|
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)