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SI1965DH-T1-BE3

SI1965DH-T1-BE3 Vishay Siliconix


SI1965DH.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.14A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta), 1.25W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI1965DH-T1-BE3 Vishay Siliconix

Description: MOSFET 2P-CH 12V 1.14A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 740mW (Ta), 1.25W (Tc), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V, Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active.

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SI1965DH-T1-BE3 SI1965DH-T1-BE3 Hersteller : Vishay SI1965DH.pdf MOSFETs SC70 P CHAN 12V
auf Bestellung 145641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.94 EUR
10+0.70 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.32 EUR
3000+0.24 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SI1965DH-T1-BE3 SI1965DH-T1-BE3 Hersteller : Vishay Siliconix SI1965DH.pdf Description: MOSFET 2P-CH 12V 1.14A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 740mW (Ta), 1.25W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
23+0.80 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.34 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH