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SI1965DH-T1-GE3

SI1965DH-T1-GE3 Vishay Siliconix


si1965dh.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI1965DH-T1-GE3 Vishay Siliconix

Description: MOSFET 2P-CH 12V 1.3A SC70-6, Part Status: Active, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V, Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 1.3A, Drain to Source Voltage (Vdss): 12V, Power - Max: 1.25W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).

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SI1965DH-T1-GE3 SI1965DH-T1-GE3 Vishay Siliconix si1965dh.pdf Description: MOSFET 2P-CH 12V 1.3A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 3805 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
25+0.72 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.34 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SI1965DH-T1-GE3 SI1965DH-T1-GE3 Vishay Semiconductors si1965dh.pdf MOSFETs -12V Vds 8V Vgs SC70-6
auf Bestellung 6153 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.33 EUR
10+0.82 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.37 EUR
3000+0.32 EUR
6000+0.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SI1965DH-T1-GE3 si1965dh.pdf
SI1965DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 3805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
25+0.72 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.34 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SI1965DH-T1-GE3 si1965dh.pdf
SI1965DH-T1-GE3
Hersteller: Vishay Semiconductors
MOSFETs -12V Vds 8V Vgs SC70-6
auf Bestellung 6153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.33 EUR
10+0.82 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.37 EUR
3000+0.32 EUR
6000+0.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH