SI1965DH-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Technische Details SI1965DH-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6, Part Status: Active, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V, Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 1.3A, Drain to Source Voltage (Vdss): 12V, Power - Max: 1.25W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1965DH-T1-GE3 nach Preis ab 0.35 EUR bis 1.58 EUR
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SI1965DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 12V 1.3A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
auf Bestellung 3805 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1965DH-T1-GE3 | Vishay Semiconductors |
MOSFETs -12V Vds 8V Vgs SC70-6 |
auf Bestellung 6153 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI1965DH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Description: MOSFET 2P-CH 12V 1.3A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 3805 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.15 EUR |
| 25+ | 0.86 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.4 EUR |
| SI1965DH-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -12V Vds 8V Vgs SC70-6
MOSFETs -12V Vds 8V Vgs SC70-6
auf Bestellung 6153 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.58 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.38 EUR |
| 6000+ | 0.35 EUR |